2N4856A データシートの表示（PDF） - Vishay Semiconductors
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2N4856A Datasheet PDF : 5 Pages
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2N4856A/4857A/4858A
Specificationsa
Parameter
Symbol
Test Conditions
Limits
2N4856A
2N4857A
2N4858A
Typb Min Max Min Max Min Max Unit
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentc
Gate Reverse Current
Gate Operating Currentd
Drain Cutoff Current
Drain-Source On-Voltage
Drain-Source On-Resistanced
Gate-Source Forward Voltaged
Dynamic
V(BR)GSS
VGS(off)
IDSS
IGSS
IG
ID(off)
VDS(on)
rDS(on)
VGS(F)
IG = –1 mA , VDS = 0 V
VDS = 15 V, ID = 0.5 nA
VDS = 15 V, VGS = 0 V
VGS = –20 V, VDS = 0 V
TA = 150_C
VDG = 15 V, ID = 10 mA
VDS = 15 V, VGS = –10 V
TA = 150_C
ID = 5 mA
VGS = 0 V
ID = 10 mA
ID = 20 mA
VGS = 0 V, ID = 1 mA
IG = 1 mA , VDS = 0 V
–55 –40
–40
–40
V
–4 –10 –2 –6 –0.8 –4
50
20 100 8
80 mA
–5
–250
–250
–250 pA
–13
–500
–500
–500 nA
–5
pA
5
250
250
250
13
500
500
500 nA
0.25
0.5
0.35
0.5
V
0.5
0.75
25
40
60 W
0.7
V
Common-Source
Forward Transconductanced
gfs
6
VDS = 20 V, ID = 1 mA
Common-Source
Output Conductanced
gos
f = 1 kHz
25
Drain-Source On-Resistance
rds(on)
VGS = 0 V, ID = 0 mA
f = 1 kHz
Common-Source
Input Capacitance
Ciss
Common-Source
Reverse Transfer Capacitance
Crss
7
VDS = 0 V, VGS = –10 V
f = 1 MHz
3
Equivalent Input
Noise Voltaged
en
VDS = 10 V, ID = 10 mA
f = 1 kHz
3
mS
mS
25
40
60 W
10
10
10
pF
4
3.5
3.5
nV⁄
√Hz
Switching
Turn-On Time
Turn-Off Time
td(on)
2
5
6
8
tr
VDD = 10 V, VGSH = 0 V
See Switching Circuit
2
3
4
8
ns
tOFF
12
20
40
80
Notes
a. TA = 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v100 ms duty cycle v10%.
d. This parameter not registered with JEDEC.
NCB
2
Siliconix
S-52424—Rev. C, 14-Apr-97
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