2N4856A データシートの表示（PDF） - Vishay Semiconductors
部品番号
コンポーネント説明
メーカー
2N4856A Datasheet PDF : 5 Pages
| |||
2N4856A/4857A/4858A
Typical Characteristics
On-Resistance and Drain Current
100
vs. Gate-Source Cutoff Voltage
200
rDS @ ID = 1 mA, VGS = 0
IDSS @ VDS = 20 V, VGS = 0
80
160
60
rDS
IDSS
120
40
80
20
40
0
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
On-Resistance vs. Temperature
200
ID = 1 mA
rDS changes X 0.7%/_C
160
120
80
VGS(off) = –2 V
–4 V
40
–8 V
0
–55 –35 –15 5 25 45 65 85 105 125
TA – Temperature (_C)
Turn-Off Switching
30
td(off) independent of device VGS(off)
VDG = 5 V, VGS(L) = –10 V
24
On-Resistance vs. Drain Current
100
TA = 25_C
80
VGS(off) = –2 V
60
40
–4 V
20
–8 V
0
1
10
100
ID – Drain Current (mA)
Turn-On Switching
5
tr approximately independent of ID
4
VDG = 5 V, RG = 50 W
VGS(L) = –10 V
3
tr
td(on) @
ID = 12 mA
2
1
td(on) @
ID = 3 mA
0
0
–2
–4
–6
–8
–10
VGS(off) – Gate-Source Cutoff Voltage (V)
Capacitance vs. Gate-Source Voltage
30
f = 1 MHz
24
18
tf
VGS(off) = –2 V
12
td(off)
6
VGS(off) = –8 V
0
0
2
4
6
8
10
ID – Drain Current (mA)
Siliconix
S-52424—Rev. C, 14-Apr-97
18
12
6
0
0
Ciss @ VDS = 0 V
Crss @ VDS = 0 V
–4
–8
–12
–16 –20
VGS – Gate-Source Voltage (V)
3
Share Link: 