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FTP540 データシートの表示(PDF) - InPower Semiconductor

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FTP540
IPS
InPower Semiconductor IPS
FTP540 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
Min.
--
Rating
Typ. Max.
--
33
ISM
Maximum Pulsed Current (Body Diode)
--
--
110
VSD
Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
--
145
175
Qrr
Reverse Recovery Charge
--
624
745
Units Test Conditions
A
Integral pn-diode in
MOSFET
A
V
IS=16A,VGS=0V
ns
VGS=0V
IF=16A,
nC
di/dt=100A/us
Notes:
*1. TJ=+25to +175.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD=16A di/dt100A/us, VDDBVDSS, TJ=+175.
*4. Pulse width380us; duty cycle2%.
©2009 InPower Semiconductor Co., Ltd.
Page 3 of 10
FTP540 Preliminary. Mar. 2009

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