Source-Drain Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current (Body Diode)
Min.
--
Rating
Typ. Max.
--
33
ISM
Maximum Pulsed Current (Body Diode)
--
--
110
VSD
Diode Forward Voltage
--
--
1.5
trr
Reverse Recovery Time
--
145
175
Qrr
Reverse Recovery Charge
--
624
745
Units Test Conditions
A
Integral pn-diode in
MOSFET
A
V
IS=16A,VGS=0V
ns
VGS=0V
IF=16A,
nC
di/dt=100A/us
Notes:
*1. TJ=+25℃ to +175℃.
*2. Repetitive rating; pulse width limited by maximum junction temperature.
*3. ISD=16A di/dt≤100A/us, VDD≤BVDSS, TJ=+175℃.
*4. Pulse width≤380us; duty cycle≤2%.
©2009 InPower Semiconductor Co., Ltd.
Page 3 of 10
FTP540 Preliminary. Mar. 2009