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FTP540 データシートの表示(PDF) - InPower Semiconductor

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FTP540
IPS
InPower Semiconductor IPS
FTP540 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Characteristics Curve:
1000
150
125
100us
100
100
1ms
10ms
75
100ms
10 OPERATION IN THIS AREA MAY
50
BE LIMITED BY RDS(on)
Tj=MAX RATED Tc=25 C
DC
25
1.0
0.0
10
100
Vds, Drain Source Voltage, Volts
Figure 1 Maximum Forward Bias Safe Operating Area
35
30
25
20
15
10
5.0
0.0
25
50
75
100
125
150 175
Tc, Case Temperature, C
Figure 3 Maximum Continuous Drain Current vs Case
Temperature
1.00 1.000
50%
20%
00..110000
10%
5%
2%
0.010
0.010
1%
Single pulse
0.0
25
Figure 2
50
75
100
125
150
Tc, Case Temperature, C
Maximum Power Dissipation vs Case Temperature
40
Vgs=15V
30
20
10
0.0
0
Vgs=7.0
V
Vgs=6.5
V
Vgs=6.0
V
Vgs=5.5
V
Vgs=4.5
V
5
10
15
20
25
Vds, Drain Source Voltage, Volts
Figure 4 Typical Output Characteristics
PDM
t1
1 t2
1
NOTES:
DUTY FACTOR:D=t1/t2
PEAK Tj=PDM×ZthJC×RthJC+TC
0.001
0.001
00.0.000000101
00..000 00011
00..000011
00.0.011
0.01.1
11
Rectangular Pulse Duration, Seconds
1010
Figure 5 Maximum Effective Thermal Impedance, Junction to case
©2009 InPower Semiconductor Co., Ltd.
Page 4 of 10
FTP540 Preliminary. Mar. 2009

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