D2195 データシートの表示（PDF） - ROHM Semiconductor
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D2195 Datasheet PDF : 1 Pages
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Transistors
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867 / 2SD2398
!Features
1) Darlington connection for high DC current gain.
2) Built-in resistor between base and emitter.
3) Built-in damper diode.
4) Complements the 2SB1580 / 2SB1316 / 2SB1567.
!Absolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
2SD2195
Collector 2SD1980
power
dissipation 2SD1867
2SD2398
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Limits
100
100
6
2
3
2
1
10
1
2
20
150
−55 ∼ +150
∗1 Single pulse Pw=100ms
∗ 2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
∗ 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
Unit
V
V
V
A(DC)
A(Pulse) ∗1
W ∗2
W(Tc=25°C)
W ∗3
W(Tc=25°C)
°C
°C
!Packaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SD2195 2SD1980 2SD1867 2SD2398
MPT3 CPT3
ATV TO-220FN
1k ∼ 10k 1k ∼ 10k 1k ∼ 10k 1k ∼ 10k
DP ∗
−
−
−
T100
TL
TV2
−
1000
2500
2500
500
!External dimensions (Units : mm)
2SD2195
ROHM : MPT3
EIAJ : SC-62
4.0
1.0
2.5 0.5
(1)
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1980
5.5 1.5
0.9
C0.5
ROHM : CPT3
EIAJ : SC-63
0.8Min.
1.5
2.5
9.5
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1867
6.8
2.5
0.65Max.
ROHM : ATV
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
(1) Emitter
(2) Collector
(3) Base
!Circuit schematic
C
B
R1
R2
E
R1 3.5kΩ
R2 300Ω
B : Base
C : Collector
E : Emitter
2SD2398
10.0
φ 3.2
4.5
2.8
1.2
1.3
0.8
2.54
2.54
(1) (2) (3)
(1) (2) (3)
ROHM : TO-220FN
0.75 2.6
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
!Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown voltage
BVCBO
100
−
−
V
IC = 50µA
Collector-emitter breakdown voltage BVCEO
100
−
−
V
IC = 5mA
Collector cutoff current
ICBO
−
−
10
µA VCB = 100V
Emitter cutoff current
IEBO
−
−
3
mA VEB = 5V
Collector-emitter saturation voltage
VCE(sat)
−
−
1.5
V
IC = 1A , IB = 1mA
∗
DC current transfer ratio
hFE
1000
−
10000
−
VCE = 2V , IC = 1A
∗
Output capacitance
Cob
−
25
−
pF VCB = 10V , IE = 0A , f = 1MHz
∗ Measured using pulse current.
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