HMT325S6CFR8C データシートの表示（PDF） - Hynix Semiconductor

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HMT325S6CFR8C

204pin DDR3 SDRAM SODIMM

Hynix Semiconductor 

AC & DC Output Measurement Levels

Single Ended AC and DC Output Levels

Table below shows the output levels used for measurements of single ended signals.

Single-ended AC and DC Output Levels

Symbol

VOH(DC)

VOM(DC)

VOL(DC)

VOH(AC)

VOL(AC)

Notes:

Parameter

DC output high measurement level (for IV curve linearity)

DC output mid measurement level (for IV curve linearity)

DC output low measurement level (for IV curve linearity)

AC output high measurement level (for output SR)

AC output low measurement level (for output SR)

DDR3-800, 1066,

1333 and 1600

0.8 x VDDQ

0.5 x VDDQ

0.2 x VDDQ

VTT + 0.1 x VDDQ

VTT - 0.1 x VDDQ

Unit

V

V

V

V

V

Notes

1

1

1. The swing of ±0.1 x VDDQ is based on approximately 50% of the static single ended output high or low

swing with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ / 2.

Differential AC and DC Output Levels

Table below shows the output levels used for measurements of single ended signals.

Differential AC and DC Output Levels

Symbol

VOHdiff (AC)

VOLdiff (AC)

Notes:

Parameter

AC differential output high measurement level (for output SR)

AC differential output low measurement level (for output SR)

DDR3-800, 1066,

1333 and 1600

+ 0.2 x VDDQ

- 0.2 x VDDQ

Unit

V

V

Notes

1

1

1. The swing of ±0.2 x VDDQ is based on approximately 50% of the static differential output high or low

swing with a driver impedance of 40 Ω and an effective test load of 25 Ω to VTT = VDDQ/2 at each of the

differential outputs.

Rev. 1.0/Sep. 2012

22

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