2SC2853 データシートの表示（PDF） - Hitachi -> Renesas Electronics
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2SC2853 Datasheet PDF : 5 Pages
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2SC2853, 2SC2854
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Tstg
2SC2853
2SC2854
Unit
90
120
V
90
120
V
5
5
V
100
100
mA
–100
–100
mA
400
400
mW
150
150
°C
–55 to +150 –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
2SC2853
2SC2854
Item
Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage
V(BR)CBO 90 — — 120 — — V
IC = 10 µA, IE = 0
Collector to emitter
breakdown voltage
V(BR)CEO 90 — — 120 — — V
IC = 1 mA, RBE = ∞
Emitter to base breakdown V(BR)EBO 5
voltage
—— 5
— —V
IE = 10 µA, IC = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector to emitter
saturation voltage
I CBO
I EBO
hFE*1
VCE(sat)
— — 0.1 — — 0.1 µA
— — 0.1 — — 0.1 µA
250 — 800 250 — 800
— 0.05 0.10 — 0.05 0.10 V
VCB = 70 V, IE = 0
VEB = 2 V, IC = 0
VCE = 12 V, IC = 2 mA*2
IC = 10 mA, IB = 1 mA*2
Base to emitter saturation VBE(sat) —
voltage
0.7 1.0 —
0.7 1.0 V
Gain bandwidth product fT
Collector output capacitance Cob
— 310 — — 310 — MHz VCE = 6 V, IC = 10 mA
—3
— —3
— pF VCB = 10 V, IE = 0,
f = 1 MHz
Notes: 1. The 2SC2853 and 2SC2854 are grouped by hFE as follows.
2. Pulse test
D
E
250 to 500 400 to 800
See characteristic curves of 2SC2855 and 2SC2856.
2
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