UPC1658G(1) データシートの表示（PDF） - NEC => Renesas Technology

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UPC1658G(1)

LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER

NEC => Renesas Technology 

µPC1658G

ILLUSTRATION OF THE TEST CIRCUIT ASSEMBLED ON EVALUATION BOARD

1

µ PC1658G

OUT

VCC

GND

C1

C3

IN

Notes 1. 50 × 50 × 0.4 mm double sided copper clad polyimide board.

2. Back side: GND pattern

3. Solder plated on pattern

4.

: Through holes

COMPONENT LIST

C1 to C3

C4

R1

Value

0.01 µF

0.1 µF

OpenNote

180 Ω

Remarks

Necessary to all the test circuits

In the case of Low-noise Amplifier

In the case of Wideband Low-noise Amplifier with improved output level

Note In the case of Low-noise Amplifier, R1 is not mounted.

Data Sheet P11120EJ3V0DS00

5

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