AP4511GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=10V, ID=7A
VDS=35V, VGS=0V
VDS=28V, VGS=0V
VGS=±20V
ID=7A
VDS=28V
VGS=4.5V
VDS=18V
ID=1A
RG=3.3Ω,VGS=10V
RD=18Ω
VGS=0V
VDS=25V
f=1.0MHz
Gate Resistance
f=1.0MHz
35 -
-
V
- 0.02 - V/℃
- 18 25 mΩ
- 29 37 mΩ
1
-
3
V
-
9
-
S
-
-
1 uA
-
- 25 uA
-
- ±100 nA
- 11 18 nC
-
3
- nC
-
6
- nC
- 12 - ns
-
7
- ns
- 22 - ns
-
6
- ns
- 830 1330 pF
- 150 - pF
- 110 - pF
- 1.2 1.8 Ω
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
- 18 - ns
- 12 - nC