AP4503GM データシートの表示（PDF） - Advanced Power Electronics Corp
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AP4503GM Datasheet PDF : 7 Pages
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AP4503GM
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
∆BVDSS/∆Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=6A
VGS=4.5V, ID=4A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=6A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=70oC) VDS=24V, VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS=+20V, VDS=0V
ID=6A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=15V
Rise Time
ID=1A
Turn-off Delay Time
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
- 0.005 - V/℃
-
- 28 mΩ
-
- 42 mΩ
1
-
3V
- 5.7 -
S
-
-
1 uA
-
- 25 uA
-
- +100 nA
-
9 15 nC
-
2
- nC
-
6
- nC
-
8
- ns
-
7
- ns
- 19 - ns
-
6
- ns
- 610 970 pF
- 160 - pF
- 120 - pF
Source-Drain Diode
Symbol
VSD
IS
trr
Qrr
Parameter
Forward On Voltage2
Continuous Source Current ( Body Diode )
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=6A, VGS=0V
VD=VG=0V , VS=1.2V
IS=6A, VGS=0V
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
-
- 1.7 A
- 18 - ns
- 11 - nC
2
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