FDN360 データシートの表示（PDF） - Fairchild Semiconductor
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FDN360 Datasheet PDF : 5 Pages
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May 2003
FDN360P
Single P-Channel, PowerTrench® MOSFET
General Description
This P-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor advanced Power Trench
process that has been especially tailored to minimize
the on-state resistance and yet maintain low gate
charge for superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
Features
• –2 A, –30 V. RDS(ON) = 80 mΩ @ VGS = –10 V
RDS(ON) = 125 mΩ @ VGS = –4.5 V
• Low gate charge (6.2 nC typical)
• High performance trench technology for extremely
low RDS(ON) .
• High power version of industry Standard SOT-23
package. Identical pin-out to SOT-23 with 30%
higher power handling capability.
D
D
S
SuperSOTTM-3
G
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
360
FDN360P
7’’
©2003 Fairchild Semiconductor Corporation
G
S
Ratings
–30
±20
–2
–10
0.5
0.46
–55 to +150
250
75
Tape width
8mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
3000 units
FDN360P Rev F1 (W)
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