2SA1162YT1 データシートの表示（PDF） - ON Semiconductor
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2SA1162YT1 Datasheet PDF : 6 Pages
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2SA1162GT1, 2SA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
• Moisture Sensitivity Level: 1
• ESD Rating: TBD
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Collector−Base Voltage
V(BR)CBO
Collector−Emitter Voltage
V(BR)CEO
Emitter−Base Voltage
V(BR)EBO
Collector Current − Continuous
IC
Collector Current − Peak
IC(P)
Base Current
IB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Power Dissipation
PD
Junction Temperature
TJ
Storage Temperature
Tstg
Value
50
50
7.0
150
200
30
Max
200
150
−55 to +150
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mAdc
Unit
mW
°C
°C
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
3
2
1
SC−59
CASE 318D
STYLE 1
MARKING DIAGRAM
SAx M
SA = Specific Device Code
x = G or Y
M = Date Code
ORDERING INFORMATION
Device†
Package
Shipping†
2SA1162GT1
SC−59
3000/Tape & Reel
2SA1162YT1
SC−59
3000/Tape & Reel
†The “T1” suffix refers to a 7 inch reel.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
1
October, 2003 − Rev. 0
Publication Order Number:
2SA1162GT1/D
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