2SA1162YT1 データシートの表示（PDF） - ON Semiconductor
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2SA1162YT1 Datasheet PDF : 6 Pages
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2SA1162GT1, 2SA1162YT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Collector−Emitter Breakdown Voltage (IC = 2.0 mAdc, IB = 0)
V(BR)CEO
50
Collector−Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
50
Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
7.0
Collector−Base Cutoff Current (VCB = 50 Vdc, IE = 0)
ICBO
−
Emitter Cut−off Current (VEB = 5 V, IC = 0 V)
IEBO
−
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
(VCE = 30 Vdc, IB = 0)
ICEO
−
−
DC Current Gain (Note 1)
(VCE = 6.0 Vdc, IC = 2.0 mAdc)
hFE
2SA1162YT1
120
2SA1162GT1
200
Collector−Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
−
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product
(IC = 1.0 mA, VCE = 10.0 V, f = 10 MHz)
fT
80
Output Capacitance
(VCB = 10 V, f = 1.0 MHz)
Cobo
−
Noise Figure
NF
(IC = 0.1 mA, VCE = 6.0 Vdc, RS = 10 kW, f = 1.0 kHz, BW = 200 Hz)
−
1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Max
Unit
−
Vdc
−
Vdc
−
Vdc
0.1
mAdc
0.1
mA
0.1
mAdc
2.0
mAdc
−
240
400
0.3
Vdc
MHz
−
pF
7.0
dB
10
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