HMC797LP5E データシートの表示（PDF） - Hittite Microwave

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HMC797LP5E

GaAs pHEMT MMIC 1 WATT POWER AMPLIFIER, DC - 22 GHz

Hittite Microwave 

v02.0811

HMC797LP5E

GaAs pHEMT MMIC

1 WATT POWER AMPLIFIER, DC - 22 GHz

9

Absolute Maximum Ratings

Nominal Drain Supply to GND +12.0 V

Gate Bias Voltage (Vgg1)

-3.0 to 0 Vdc

Gate Bias Current (Igg1)

< +10 mA

Gate Bias Voltage (Vgg2)

+2.0 V to (Vdd - 6.5 V)

Gate Bias Current (Igg2)

< +10 mA

Continuous Pdiss (T= 85 °C)

(derate 69 mW/°C above 85 °C)

4.5 W

RF Input Power

+27 dBm

Output Power into VSWR >7:1 +29 dBm

Storage Temperature

-65 to 150 °C

Max Peak Reflow Temperature 260 °C

ESD Sensitivity (HBM)

Class 1A

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Outline Drawing

Reliability Information

Junction Temperature to Main-

tain 1 Million Hour MTTF

Nominal Junction Temperature

(T=85 °C, Vdd = 10 V)

Thermal Resistance

(channel to ground paddle)

Operating Temperature

150 °C

144 °C

14.6 °C/W

-40 to +85 °C

Typical Supply Current vs. Vdd

Vdd (V)

+9

+10

+11

Idd (mA)

400

400

400

9-7

Package Information

NOTES:

1. LEADFRAME MATERIAL: COPPER ALLOY

2. DIMENSIONS ARE IN INCHES [MILLIMETERS]

3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE.

4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

6. ALL GROUND LEADS AND GROUND PADDLE MUST BE

SOLDERED TO PCB RF GROUND.

7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.

Part Number

Package Body Material

Lead Finish

HMC797LP5E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn

[1] 4-Digit lot number XXXX

[2] Max peak reflow temperature of 260 °C

MSL Rating

MSL1 [2]

Package Marking [1]

H797

XXXX

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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