2SA1093 データシートの表示（PDF） - New Jersey Semiconductor
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2SA1093 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1093
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -4A; IB= -0.4A
VeE(on) Base-Emitter On Voltage
lc= -4A ; VCE- -5V
ICBO
Collector Cutoff Current
VCB=-120V; IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
IC=-1A;VCE=-5V
hpE-2
DC Current Gain
lc= -4A; VCE= -5V
COB
Output Capacitance
lE=0;VCB=-10V;f= 1.0MHz
fr
Current-Gain—Bandwidth Product
lc=-1A;VCE=-10V
MIN TYP. MAX UNIT
-120
V
-2.0 V
-2.5 V
-50 u A
-50 M A
55
240
30
150
PF
90
MHz
• h.FE-1 Classifications
R
O
Y
55-110
80-160 120-240
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