2SC2773 データシートの表示（PDF） - Inchange Semiconductor
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2SC2773 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC2773
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=50mA; IB=0
200
V
V(BR)EBO Emitter-base breakdown voltage
IE=1mA; IC=0
6
V
VCEsat Collector-emitter saturation voltage IC=10 A;IB=1 A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=6V; IC=0
3.0
V
100 μA
100 μA
hFE
DC current gain
IC=5A ; VCE=4V
50
180
fT
Transition frequency
IC=0.5A ; VCE=12V
20
MHz
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
250
固IN电C半H导AN体GE SEMICONDUCTOR hFE classifications
O
P
Y
50-100 70-140 90-180
pF
2
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