2SC3746 データシートの表示（PDF） - Inchange Semiconductor
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2SC3746 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC3746
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞
60
V
V(BR)CBO Collector-base breakdown voltage
IC=10mA ;IE=0
80
V
V(BR)EBO Emitter-base breakdown voltage
IE=10mA ;IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.125A
0.4
V
ICBO
Collector cut-off current
VCB=40V; IE=0
0.1 mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
0.1 mA
hFE
DC current gain
IC=1A ; VCE=2V
70
280
fT
Transition frequency
IC=1A ; VCE=5V
100
MHz
固IN电C半H导AN体GE SEMICONDUCTOR Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
0.1
IC=2.0A; IB1=-IB2=0.1A
VCC=20V ,RL=10Ω
0.5
0.1
μs
μs
μs
hFE Classifications
Q
R
S
70-140 100-200 140-280
2
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