2SK3659 データシートの表示（PDF） - NEC => Renesas Technology

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2SK3659

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK3659

SWITCHING

N-CHANNEL POWER MOS FET

DESCRIPTION

The 2SK3659 is N-channel MOS FET device that features a

low on-state resistance and excellent switching characteristics,

designed for low voltage high current applications such as

DC/DC converter with synchronous rectifier.

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3659

Isolated TO-220

FEATURES

•4.5V drive available.

•Low on-state resistance,

RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)

•Low gate charge,

QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)

•Built-in gate protection diode.

•Avalanche capability ratings.

•Isolated TO-220 package.

ABSOLUTE MAXIMUM RATING (TA = 25°C)

Drain to source voltage (VGS = 0 V)

Gate to source voltage (VDS = 0 V)

VDSS

VGSS

20

V

±20

V

Drain current (DC) (TC = 25°C)

Drain current (pulse) Note1

ID(DC)

±65

A

ID(pulse)

±260

A

Total power dissipation (TA = 25°C)

PT1

2.0

W

Total power dissipation (TC = 25°C)

PT2

25

W

Channel temperature

Tch

150

°C

Storage temperature

Single Avalanche Current Note2

Single Avalanche Energy Note2

Tstg

−55 to +150 °C

IAS

35

A

EAS

122

mJ

Note 1. PW ≤ 10 µs, Duty Cycle ≤ 1%

2. Starting Tch = 25°C, VDD = 10 V, RG = 25 Ω, VGS = 20 → 0 V

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16251EJ2V0DS00 (2nd edition)

©

Date Published June 2002 NS CP (K)

Printed in Japan

2002

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