2SK3659 データシートの表示（PDF） - NEC => Renesas Technology

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2SK3659

MOS FIELD EFFECT TRANSISTOR

NEC => Renesas Technology 

2SK3659

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristics

Symbol

Test Conditions

Zero Gate Voltage Drain Current

Gate Leakage Current

IDSS

VDS = 20 V, VGS = 0 V

IGSS

VGS = ±20 V, VDS = 0 V

Gate Cut-off Voltage

VGS(off) VDS = 10 V, ID = 1 mA

Forward Transfer Admittance

| yfs | VDS = 10 V, ID = 40 A

Drain to Source On-state Resistance

RDS(on)1 VGS = 10 V, ID = 40 A

RDS(on)2 VGS = 4.5 V, ID = 40 A

Input Capacitance

Ciss

VDS = 10 V

Output Capacitance

Coss

VGS = 0 V

Reverse Transfer Capacitance

Crss f = 1 MHz

Turn-on Delay Time

td(on)

VDD = 10 V, ID = 40 A

Rise Time

Turn-off Delay Time

Fall Time

tr

td(off)

tf

VGS = 10 V

RG = 10 Ω

Total Gate Charge

Gate to Source Charge

QG

VDD = 16 V

QGS

VGS = 10 V

Gate to Drain Charge

QGD ID = 65 A

Body Diode Forward Voltage

VF(S-D) IF = 65 A, VGS = 0 V

Reverse Recovery Time

Reverse Recovery Charge

trr

IF = 65 A, VGS = 0 V

Qrr

di/dt = 100 A/µs

MIN.

1.5

15

TYP.

4.6

7.1

1700

700

250

16

14

50

12

32

6.0

8.3

1.0

45

34

MAX. Unit

10

µA

±10

µA

2.5

V

S

5.7

mΩ

9.9

mΩ

pF

pF

pF

ns

ns

ns

ns

nC

nC

nC

V

ns

nC

TEST CIRCUIT 1 AVALANCHE CAPABILITY

D.U.T.

RG = 25 Ω

L

PG.

50 Ω

VDD

VGS = 20 → 0 V

IAS

ID

VDD

BVDSS

VDS

Starting Tch

TEST CIRCUIT 3 GATE CHARGE

D.U.T.

IG = 2 mA

RL

PG.

50 Ω

VDD

TEST CIRCUIT 2 SWITCHING TIME

D.U.T.

PG.

RG

VGS

0

τ

τ = 1 µs

Duty Cycle ≤ 1%

RL

VDD

VGS

VGS

Wave Form

10%

0

VDS

90%

VDS

VDS

0

Wave Form

td(on)

VGS

90%

90%

10% 10%

tr td(off)

tf

ton

toff

2

Data Sheet D16251EJ2V0DS

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