Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
部品番号
コンポーネント説明
2SK3659 データシートの表示(PDF) - NEC => Renesas Technology
部品番号
コンポーネント説明
メーカー
2SK3659
MOS FIELD EFFECT TRANSISTOR
NEC => Renesas Technology
2SK3659 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
SINGLE AVALANCHE CURRENT vs.
INDUCTIVE LOAD
100
I
AS
= 35 A
10
E
AS
= 122 mJ
1
V
DD
= 10 V
R
G
= 25
Ω
V
GS
= 20
→
0 V
Starting T
ch
= 25
°
C
0.1
0.01
0.1
1
10
L - Inductive Load - mH
2SK3659
SINGLE AVALANCHE ENERGY
DERATING FACTOR
100
V
DD
= 10 V
R
G
= 25
Ω
80
V
GS
= 20
→
0 V
I
AS
≤
35 A
60
40
20
0
25
50
75
100
125
150
Starting T
ch
- Starting Channel Temperature -
°
C
6
Data Sheet D16251EJ2V0DS
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]