2N4117A データシートの表示（PDF） - Vishay Semiconductors
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2N4117A Datasheet PDF : 5 Pages
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2N/PN/SST4117A Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
1000
vs. Gate-Source Cutoff Voltage
300
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
800
240
600
gfs
400
200
180
120
IDSS
60
0
0
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
0
−5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
15
5
12
rDS
gos
4
9
3
6
2
1 nA
100 pA
Gate Leakage Current
VGS(off) = −2.5 V
100 mA
TA = 125_C
10 mA IGSS @ 125_C
10 pA
100 mA
10 mA
1 pA
0.1 pA
0
IGSS @ 25_C
TA = 25_C
6
12
18
24
30
VDG − Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
200
VGS(off) = −2.5 V
160
TA = −55_C
120
25_C
125_C
80
3
0
0
100
80
60
40
20
rDS @ ID = 10 mA, VGS = 0 V
1
gos @ VDS = 10 V, VGS = 0 V
f = 1 kHz
0
−1
−2
−3
−4
−5
VGS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
VGS(off) = −0.7 V
VGS = 0 V
−0.1 V
−0.2 V
−0.3 V
−0.4 V
−0.5 V
0
0
4
8
12
16
20
VDS − Drain-Source Voltage (V)
Document Number: 70239
S-41231—Rev. G, 28-Jun-04
40
VDS = 10 V
f = 1 kHz
0
0.01
0.1
1
ID − Drain Current (mA)
Output Characteristics
500
VGS(off) = −2.5 V
400
VGS = 0 V
300
−0.5 V
200
−1.0 V
100
0
0
−1.5 V
−2.0 V
4
8
12
16
20
VDS − Drain-Source Voltage (V)
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