MRF166C データシートの表示（PDF） - Motorola => Freescale

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MRF166C

N–Channel Enhancement Mode MOSFETs

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

(VGS = 0 V, ID = 5.0 mA)

V(BR)DSS

Zero Gate Voltage Drain Current

(VDS = 28 V, VGS = 0 V)

IDSS

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0 V)

IGSS

ON CHARACTERISTICS

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

VGS(th)

Forward Transconductance

gfs

(VDS = 10 V, ID = 1.5 A)

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0 V, f = 1.0 MHz)

Crss

FUNCTIONAL CHARACTERISTICS

Noise Figure

NF

(VDD = 28 V, f = 30 MHz, IDQ = 50 mA)

Common Source Power Gain

Gps

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

Drain Efficiency

η

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA)

Electrical Ruggedness

(VDD = 28 V, Pout = 20 W, f = 400 MHz, IDQ = 100 mA,

ψ

Load VSWR 30:1 at All Phase Angles)

Min

Typ

Max

Unit

65

—

—

V

—

—

1.0

mA

—

—

1.0

µA

1.0

3.0

6.0

V

600

800

—

mhos

—

30

—

pF

—

35

—

pF

—

4.5

—

pF

—

2.5

—

dB

14

17

—

dB

50

55

—

%

No Degradation in Output Power

MRF166C

2

MOTOROLA RF DEVICE DATA

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