MJL4281A データシートの表示（PDF） - ON Semiconductor

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MJL4281A

Complementary NPN−PNP Silicon Power Bipolar Transistors

ON Semiconductor 

MJL4281A (NPN) MJL4302A (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Collector Emitter Sustaining Voltage

(IC = 50 mA, IB = 0)

Collector Cut−off Current

(VCE = 200 V, IB = 0)

Collector Cutoff Current

(VCB = 350 Vdc, IE = 0)

Emitter Cutoff Current

(VEB = 5.0 Vdc, IC = 0)

SECOND BREAKDOWN

Second Breakdown Collector with Base Forward Biased

(VCE = 50 Vdc, t = 1.0 s (non−repetitive)

(VCE = 100 Vdc, t = 1.0 s (non−repetitive)

ON CHARACTERISTICS

DC Current Gain

(IC = 100 mAdc, VCE = 5.0 Vdc)

(IC = 1.0 Adc, VCE = 5.0 Vdc)

(IC = 3.0 Adc, VCE = 5.0 Vdc)

(IC = 5.0 Adc, VCE = 5.0 Vdc)

(IC = 8.0 Adc, VCE = 5.0 Vdc)

(IC = 15 Adc, VCE = 5.0 Vdc)

Collector−Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 Adc)

Emitter−Base Saturation Voltage

(IC = 8.0 Adc, IB = 0.8 A)

Base−Emitter ON Voltage

(IC = 8.0 Adc, VCE = 5.0 Vdc)

DYNAMIC CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 1.0 MHz)

Symbol

VCE(sus)

ICEO

ICBO

IEBO

IS/b

hFE

VCE(sat)

VBE(sat)

VBE(on)

fT

Cob

Min

Max

Unit

350

Vdc

100

mAdc

mAdc

−

50

mAdc

−

5.0

Adc

4.5

−

1.0

−

−

80

250

80

250

80

250

80

250

50

−

10

−

Vdc

−

1.0

Vdc

−

1.4

Vdc

−

1.5

MHz

35

−

pF

−

600

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