MDF9N50
N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description
The MDF9N50 uses advanced MagnaChip’s MOSFET
Technology, which provides low on-state resistance, high
switching performance and excellent quality.
MDF9N50 is suitable device for SMPS, high Speed switching
and general purpose applications.
Features
VDS = 500V
ID = 9.0
RDS(ON) ≤ 0.85Ω
@ VGS = 10V
@ VGS = 10V
Applications
Power Supply
HID
Lighting
G DS
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (※)
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
※ Id limited by maximum junction temperature
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAS
TJ, Tstg
Rating
500
±30
9.0
5.5
36
38
0.3
4.5
300
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
oC
Symbol
RθJA
RθJC
Rating
62.5
3.3
Unit
oC/W
Dec.2009. Version 1.2
1
MagnaChip Semiconductor Ltd.