Vgs=5.5V
=6.0V
10
=6.5V
=7.0V
=8.0V
=10.0V
1
Notes
1. 250㎲ Pulse Test
2. TC=25℃
0.1
0.1
1
10
VDS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. VGS = 10 V
2. ID = 5 A
1.4
1.2
1.0
VGS=10V
VGS=4.5V
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
1.3
1.2
1.1
1.0
0.9
VGS=10.0V
VGS=20V
0.8
0.7
0.6
0
5
10
15
20
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. VDS=30V
10
150℃
25℃
-55℃
1
4
5
6
7
8
VGS [V]
Fig.5 Transfer Characteristics
100
※ Notes :
1. V = 0 V
GS
2. ID = 250㎂
10
150℃
25℃
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Dec.2009. Version 1.2
3
MagnaChip Semiconductor Ltd.