MDF9N50TH データシートの表示（PDF） - MagnaChip Semiconductor
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MDF9N50TH Datasheet PDF : 6 Pages
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10
※ Note : ID = 9.0A
8
100V
250V
400V
6
4
2
0
0 2 4 6 8 10 12 14 16 18 20 22
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
10 µs
100 µs
1 ms
10 ms
100 ms
DC
10-1
Single Pulse
T =Max rated
J
TC=25℃
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
1400
Coss
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
Ciss
800
600
400
Crss
200
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0.1
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Fig.10 Maximum Drain Current vs. Case
Temperature
D=0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
single pulse
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JC=3.3℃/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
10000
8000
single Pulse
RthJC = 3.3℃/W
TC = 25℃
6000
4000
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec.2009. Version 1.2
4
MagnaChip Semiconductor Ltd.
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