DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
2
VGS = 10 V
Pulsed
1.5
1
ID = 21 A
0.5
10 A
0
-75 -25
25
75 125 175
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
tf
100
td(on)
td(off)
tr
10
VDD = 150 V
VGS = 10 V
RG = 10 Ω
1
0.1
1
10
100
ID - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100
10
VGS = 10 V
1
0V
0.1
Pulsed
0.01
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
2SK4092
10000
1000
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
Ciss
100
Coss
10
1
VGS = 0 V
f = 1 MHz
0.1
0.1
1
Crss
10
100
1000
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
600
12
VDD = 450 V
500
300 V
10
150 V
400
VGS
8
300
6
200
4
100
0
0
VDS
2
ID = 21 A
0
10 20 30 40 50 60
QG - Gate Charge - nC
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
di/dt = 100 A/μs
VGS = 0 V
10
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D18776EJ1V0DS
5