2SK365 データシートの表示（PDF） - Toshiba
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2SK365 Datasheet PDF : 5 Pages
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TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
2SK365
Unit: mm
· High breakdown voltage: VGDS = −50 V
· High input impedance: IGSS = −1.0 nA (max) (VGS = −30 V)
· Low RDS (ON): RDS (ON) = 80 Ω (typ.) (IDSS = 5 mA)
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Symbol
VGDS
IG
PD
Tj
Tstg
Rating
Unit
-50
V
10
mA
200
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Drain-source ON resistance
IGSS
V (BR) GDS
VGS = -30 V, VDS = 0
VDS = 0, IG = -100 mA
¾
¾ -1.0 nA
-50
¾
¾
V
IDSS
(Note 1)
VDS = 10 V, VGS = 0
1.2
¾
14
mA
VGS (OFF) VDS = 10 V, ID = 0.1 mA
-0.25 ¾ -1.5
V
ïYfsï
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2) 5.0
19
¾
mS
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
¾
13
¾
pF
Crss
VDG = 10 V, ID = 0, f = 1 MHz
¾
3
¾
pF
RDS (ON) VDS = 10 mV, VGS = 0
(Note 2) ¾
80
¾
W
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value IDSS = 5 mA
1
2003-03-26
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