FDH44N50 データシートの表示（PDF） - Fairchild Semiconductor
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FDH44N50 Datasheet PDF : 6 Pages
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Package Marking and Ordering Information
Device Marking
FDH44N50
Device
FDH44N50
Package
TO-247
Reel Size
-
Tape Width
-
Quantity
30
Electrical Characteristics TJ = 25°C (unless otherwise noted)
Symbol
Parameter
Test Conditions
Min
Statics
BVDSS Drain to Source Breakdown Voltage
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient
rDS(ON)
VGS(th)
Drain to Source On-Resistance
Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate to Source Leakage Current
ID = 250µA, VGS = 0V
500
Reference to 25oC,
ID = 1mA
-
VGS = 10V, ID = 22A
-
VDS = VGS, ID = 250µA
2
VDS = 500V TC = 25oC
-
VGS = 0V
TC = 150oC -
VGS = ±20V
-
Dynamics
gfs
Forward Transconductance
VDS = 50V, ID = 22A
11
Qg(TOT) Total Gate Charge at 10V
VGS = 10V,
-
Qgs
Gate to Source Gate Charge
VDS = 400V,
-
Qgd
Gate to Drain “Miller” Charge
ID = 44A
-
td(ON) Turn-On Delay Time
VDD = 250V,
-
tr
Rise Time
ID = 44A,
-
td(OFF) Turn-Off Delay Time
RG = 2.15Ω,
-
tf
Fall Time
RD = 5.68Ω
-
CISS
COSS
Input Capacitance
Output Capacitance
-
VDS = 25V, VGS = 0V,
f = 1MHz
-
CRSS Reverse Transfer Capacitance
-
Avalanche Characteristics
EAS
Single Pulse Avalanche Energy2
IAR
Avalanche Current
1500
-
Drain-Source Diode Characteristics
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current1
(Body Diode)
VSD
Source to Drain Diode Voltage
trr
Reverse Recovery Time
QRR Reverse Recovered Charge
MOSFET symbol
D
-
showing the
integral reverse G
p-n junction diode. S
-
ISD = 44A
-
ISD = 44A, dISD/dt = 100A/µs
-
ISD = 44A, dISD/dt = 100A/µs
-
Notes:
1: Repetitive rating; pulse width limited by maximum junction temperature
2: Starting TJ = 25°C, L = 1.61mH, IAS = 44
Typ
-
0.61
0.11
3.15
-
-
-
-
90
24
31
16
84
45
79
5335
645
40
-
-
-
-
0.900
920
14
Max
-
-
0.12
4
25
250
±100
-
108
29
37
-
-
-
-
-
-
-
-
44
44
176
1.2
1100
18
Units
V
V/°C
Ω
V
µA
nA
S
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
mJ
A
A
A
V
ns
µC
©2002 Fairchild Semiconductor Corporation
FDH44N50 Rev. A4, August 2002
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