ST3413A データシートの表示（PDF） - STANSON TECHNOLOGY

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ST3413A

P Channel Enhancement Mode MOSFET -3.5A

STANSON TECHNOLOGY 

ST3413A

P Channel Enhancement Mode MOSFET

-3.5A

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Symbol

Condition

Min Typ Max Unit

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

V(BR)DSS

VGS(th)

IGSS

IDSS

On-State Drain Current

ID(on)

Drain-source On-Resistance RDS(on)

Forward Transconductance

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

Turn-On Time

Turn-Off Time

gfs

VSD

Qg

Qgs

Qgd

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VGS=0V,ID=-250uA

-20

V

VDS=VGS,ID=-250uA -0.35

-0.8 V

VDS=0V,VGS=±8V

VDS=-20V,VGS=0V

VDS=-20V,VGS=0V

TJ=55℃

VDS≦-5V,VGS=-4.5V

VDS≦-5V,VGS=-2.5V

VGS=-1.8V,ID=-1.7A

VGS=-2.5V,ID=-2.4A

VGS=-4.5V,ID=-3.4A

VDS=-5V,ID=-2.8A

±100 nA

-1

-5 uA

-6

-3

A

0.125

0.080

Ω

0.070

6

S

IS=-1.5A,VGS=0V

-0.8 -1.2 V

VDS=-6V

VGS=-4.5V

ID=-2.8A

VDS=-6V

VGS=0V

f=1MHz

VDD=-6V

RL=6Ω

ID=-1A

VGEN=-4.5V

RG=6Ω

4.8 8

1.0

nC

1.0

485

85

pF

40

10 16

13 23 nS

18 25

15 20

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

ST3413A 2006 V1

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