FKPF8N80 データシートの表示（PDF） - Fairchild Semiconductor
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FKPF8N80 Datasheet PDF : 7 Pages
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Electrical Characteristics TC=25°C unless otherwise noted
Symbol
IDRM
VTM
VGT
IGT
VGD
IH
IL
dv/dt
(dv/dt)C
Parameter
Repetieive Peak Off-State Current
On-State Voltage
I
Gate Trigger Voltage (Note 2)
II
III
I
Gate Trigger Current (Note 2)
II
III
Gate Non-Trigger Voltage
Holding Current
Latching Current
I, III
II
Critical Rate of Rise of
Off-State Voltag
Critical-Rate of Rise of Off-State
Commutating Voltage (Note 3)
Test Condition
VDRM applied
TC=25°C, ITM=12A
Instantaneous measurement
VD=12V, RL=20Ω
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
VD=12V, RL=20Ω
T2(+), Gate (+)
T2(+), Gate (-)
T2(-), Gate (-)
TJ=125°C, VD=1/2VDRM
VD = 12V, ITM = 1A
VD = 12V, IG = 1.2IGT
VDRM = Rated, Tj = 125°C,
Exponential Rise
Notes:
1. Gate Open
2. Measurement using the gate trigger characteristics measurement circuit
3. The critical-rate of rise of the off-state commutating voltage is shown in the table below
4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
Min.
-
-
-
-
-
-
-
-
0.2
10
Typ.
-
-
Max.
20
1.5
Units
µA
V
-
1.5
V
-
1.5
V
-
1.5
V
-
30
mA
-
30
mA
-
30
mA
-
-
V
50
mA
50
mA
70
mA
300
V/µs
-
-
V/µs
VDRM
(V)
Test Condition
Commutating voltage and current waveforms
(inductive load)
FKPF8N80
1. Junction Temperature
TJ=125°C
2. Rate of decay of on-state
commutating current
(di/dt)C = - 4.5A/ms
3. Peak off-state voltage
VD = 400V
Supply Voltage
Main Current
Main Voltage
(dv/dt)C
Time
(di/dt)C
Time
Time
VD
Quadrant Definitions for a Triac
(+) T2
T2 Positive
+
(+) T2
Quadrant II
IGT -
(-) IGT
GATE
T1
(-) T2
(+) IGT
GATE
T1
(-) T2
Quadrant III (-) IGT
GATE
T1
(+) IGT
GATE
T1
-
T2 Negative
©2004 Fairchild Semiconductor Corporation
Quadrant I
+ IGT
Quadrant IV
Rev. B1, April 2004
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