FK20SM-9 データシートの表示（PDF） - MITSUBISHI ELECTRIC
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FK20SM-9 Datasheet PDF : 5 Pages
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MITSUBISHI Nch POWER MOSFET
FK20SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
trr
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 10A, VGS = 10V
ID = 10A, VGS = 10V
ID = 10A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 10A, VGS = 10V, RGEN = RGS = 50Ω
IS = 10A, VGS = 0V
Channel to case
IS = 20A, dis/dt = –100A/µs
Limits
Unit
Min.
Typ. Max.
450
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.23
0.30
Ω
—
2.30
3.00
V
7.0
10.0
—
S
—
2800
—
pF
—
350
—
pF
—
55
—
pF
—
60
—
ns
—
80
—
ns
—
270
—
ns
—
80
—
ns
—
1.5
2.0
V
—
—
0.45 °C/W
—
—
150
ns
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
300
250
200
150
100
50
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
MAXIMUM SAFE OPERATING AREA
102
7
5
3
tw=100µs
2
101
7
1ms
5
3
2
10ms
100
7
5
3
2
TC = 25°C
Single Pulse
100ms
DC
10–1
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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