HSMP-3810 データシートの表示（PDF） - Avago Technologies
部品番号
コンポーネント説明
メーカー
HSMP-3810 Datasheet PDF : 9 Pages
| |||
Absolute Maximum Ratings[1] T = +25°C
C
Symbol Parameter
Unit SOT-23
SOT-323
I
Forward Current (1 μs Pulse)
Amp 1
1
f
P
Peak Inverse Voltage
IV
V
Same as V
Same as V
BR
BR
T
Junction Temperature
°C
150
150
j
T
Storage Temperature
stg
°C
-65 to 150
-65 to 150
Tjc
Thermal Resistance [2]
°C/W 500
150
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to the device.
2. TC = +25°C, where TC is defined to be the temperature at the package pins where contact is made to the circuit board.
Electrical Specifications T = +25°C (Each Diode)
C
Conventional Diodes
Part
Number
HSMP-
Package
Marking
Code
3810 E0
3812 E2
3813 E3
3814 E4
3815 E5
381B E0
381C E2
381E E3
381F E4
Test Conditions
Lead
Code
0
2
3
4
5
B
C
E
F
Configuration
Single
Series
Common Anode
Common Cathode
Reverse Series
Single
Series
Common Anode
Common Cathode
Minimum
Breakdown
Voltage VBR
(V)
100
V =V
R
BR
Measure
I ≤ 10uA
R
Maximum
Total
Capacitance
CT (pF)
0.35
V = 50V
R
f = 1MHz
Minimum
Resistance
at
IF = 0.01mA,
RH (Ω)
1500
I = 0.01mA
F
f = 100MHz
Maximum
Resistance
at
IF = 20mA,
RL (Ω)
10
I = 20mA
F
f = 100MHz
Maximum
Resistance
at
IF = 100mA,
RT (Ω)
3.0
I = 100mA
F
f = 100MHz
Resistance
at
IF = 1mA,
RM (Ω)
48 to 70
I = 1mA
F
f = 100MHz
High Frequency (Low Inductance, 500 MHz – 3 GHz) PIN Diodes
Minimum Maximum Series
Typical Maximum Typical
Part
Package
Breakdown Series Resistance
Total
Total
Total
Number Marking Lead
HSMP-
Code Code Configuration
Voltage
VBR (V)
Resistance
RS (Ω)
IF = 1mA,
RM (Ω)
Capacitance Capacitance Inductance
CT (pF)
CT (pF)
LT (nH)
4810
EB
B Dual Cathode
100
3
48 - 70
0.35
0.4
1
481B
EB
B Dual Cathode
Test Conditions
V =V
R
BR
Measure
I ≤ 10μA
R
I = 100mA
F
f=
100MHz
I = 1mA
F
f = 100MHz
V = 50V
R
f = 1MHz
V = 50V
R
f = 1MHz
f=
500MHz
- 3GHz
2
Share Link: 