IRF640S データシートの表示（PDF） - International Rectifier
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IRF640S Datasheet PDF : 10 Pages
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IRF640S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
200
–––
–––
2.0
6.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
0.29 –––
––– 0.18
––– 4.0
––– –––
––– 25
––– 250
––– 100
––– -100
––– 70
––– 13
––– 39
14 –––
51 –––
45 –––
36 –––
7.5 –––
1300 –––
430 –––
130 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 11A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 11A
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
ID = 18A
VDS =160V
VGS = 10V, See Fig. 6 and 13
VDD =100V
ID = 18A
RG = 9.1Ω
RD = 5.4Ω, See Fig. 10
Between lead,
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– 18
showing the
A integral reverse
G
––– ––– 72
p-n junction diode.
S
––– ––– 2.0 V TJ = 25°C, IS = 18A, VGS = 0V
––– 300 610 ns TJ = 25°C, IF = 18A
––– 3.4 7.1 µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width ≤ 300µs; duty cycle ≤ 2%.
VDD = 50V, starting TJ = 25°C, L = 2.7mH
RG = 25Ω, IAS = 18A. (See Figure 12)
Uses IRF640 data and test conditions
ISD ≤ 18A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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