MDD1904 データシートの表示（PDF） - MagnaChip Semiconductor

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MDD1904

Single N-channel Trench MOSFET 100V, 10.8A, 140mΩ

MagnaChip Semiconductor 

MDD1904

Single N-channel Trench MOSFET 100V, 10.8A, 140mΩ

ㄹ

General Description

The MDD1904 uses advanced MagnaChip’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDD1904 is suitable device for DC to DC

converter and general purpose applications.

Features

 VDS = 100V

 ID = 10.8A @VGS = 10V



RDS(ON) (MAX)

< 140mΩ @VGS = 10V

< 150mΩ @VGS = 6.0V

D

G

S

Absolute Maximum Ratings (Tc = 25oC)

Drain-Source Voltage

Gate-Source Voltage

Characteristics

Continuous Drain Current (1)

Pulsed Drain Current

Power Dissipation

Single Pulse Avalanche Energy (2)

Junction and Storage Temperature Range

TC=25oC

TC=70oC

TC=25oC

TC=70oC

Thermal Characteristics

Characteristics

Thermal Resistance, Junction-to-Ambient (1)

Thermal Resistance, Junction-to-Case

Apr. 2012. Version 1.0

1

Symbol

VDSS

VGSS

ID

IDM

PD

EAS

TJ, Tstg

Rating

100

±20

10.8

8.7

25

35.8

22.9

12.5

-55~150

Unit

V

V

A

A

W

mJ

oC

Symbol

RθJA

RθJC

Rating

52

3.5

Unit

oC/W

MagnaChip Semiconductor Ltd.

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