MDD1904 データシートの表示（PDF） - MagnaChip Semiconductor
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MDD1904 Datasheet PDF : 6 Pages
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10
※ Note : ID = 8.0A
VDS = 50V
8
6
4
2
0
0
2
4
6
8
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
600
400
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
0
0
Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
1 ms
10 ms
100
10-1
10-1
Single Pulse
TJ=Max rated
TC=25℃
100
101
VDS, Drain-Source Voltage [V]
100 ms
1s
10s
DC
102
Fig.9 Maximum Safe Operating Area
101
D=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
single pulse
10-3
10-4
10-3
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Apr. 2012. Version 1.0
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃ ]
Fig.10 Maximum Drain Current vs.
Case Temperature
4
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