BD6973FV-LB データシートの表示（PDF） - ROHM Semiconductor
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BD6973FV-LB Datasheet PDF : 20 Pages
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BD6973FV-LB
Datasheet
Application Example (Constant values are for reference)
Protection of FG open-drain
Noise measures of substrate
Output PWM frequency setting SIG
Minimum output duty setting
Circuit that converts PWM duty
into DC voltage
PWM
Stabilization of REF voltage
Reverse-connected prevention
of the FAN connector
So bypass capacitor,
arrangement near to Vcc pin as
much as possible
0Ω to
100pF
to 1000pF
1 FG
2 OSC
3 MIN
4 TH
0.1μF to
1μF to
5 REF
Vcc
6
Vcc
A1 H
7
8 A1L
SIGNAL
OUTPUT
OSC
PWM SOFT
SWITCHING
TSD
H AL L
AMP
GND 16
H– 15
Hall bias is set according to the
amplitude of hall element
output and hall input voltage
range.
PWM
COMP
P WM
COMP
CONTROL
LOGIC
H AL L
COMP
HALL
BIAS
LOCK
PROTECT
HB 14
H+ 13
H
0Ω to
QUICK
Vcl
START
REF
REG
SOFT START
& CURRENT
LIMIT COMP
PRE-
DRIVER
REG
0.01μF
to 4.7μF
12
SS
Soft start time setting
CS 11
A2 H
100pF
to 0.01μF
200Ω
to 20kΩ
10
Low-pass filter for RNF voltage
smoothing
A2L 9
＋
Reverse-connected prevention
of the FAN connector
So bypass capacitor,
arrangement near to FETs as
much as possible
－
1μF to
470Ω to 1kΩ
M
0Ω to 2kΩ
0Ω to 2kΩ
2kΩ to 20kΩ
Drive the PMOS FET gate by
constant current flowing to IC
Adjustment the PMOS FET
slew rate
Adjustment the NMOS FET
slew rate
Stabilization of NMOS FET gate
drive
To limit motor current, the
current is detected.
Note the power consumption of
detection resistance.
Figure 27. PWM Controllable 4 Wires Type Motor Application
Substrate Design Note
(a) Motor power and ground lines are made as fat as possible.
(b) IC power line is made as fat as possible.
(c) IC ground line is common with the application ground except motor ground (i.e. hall ground etc.), and arranged
near to (–) land.
(d) The bypass capacitors (Vcc side and Vm side) are arrangement near to Vcc pin and FETs, respectively.
(e) H+ and H– lines are arranged side by side and made from the hall element to IC as shorter as possible,
because it is easy for the noise to influence the hall lines.
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TSZ22111・15・001
10/17
TSZ02201-0H1H0B100820-1-2
27.Feb.2014 Rev.002
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