2PC945P データシートの表示（PDF） - Philips Electronics
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2PC945P Datasheet PDF : 8 Pages
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Philips Semiconductors
NPN general purpose transistor
Product specification
2PC945
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-a
thermal resistance from junction to ambient note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
IEBO
hFE
hFE
VCEsat
VBEsat
VBE
Cc
Ce
fT
F
collector cut-off current
IE = 0; VCB = 60 V
−
−
emitter cut-off current
IC = 0; VEB = 5 V
−
−
DC current gain
IC = 0.1 mA; VCE = 6 V
50 −
DC current gain
IC = 1 mA; VCE = 6 V
2PC945P
200 −
collector-emitter saturation voltage IC = 100 mA; IB = 10 mA
−
−
base-emitter saturation voltage
IC = 100 mA; IB = 10 mA
−
−
base-emitter voltage
IC = 1 mA; VCE = 6 V
600 −
collector capacitance
IE = ie =0; VCB = 6 V; f = 1 MHz
−
−
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz −
11
transition frequency
IC = 10 mA; VCE = 6 V; f = 100 MHz 150 −
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ −
−
f = 1 kHz, B = 200 Hz
100 nA
100 nA
−
400
300 mV
1.1 V
700 mV
4
pF
−
pF
450 MHz
15 dB
1999 May 28
3
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