SVF12N60T データシートの表示（PDF） - Silan Microelectronics
部品番号
コンポーネント説明
メーカー
SVF12N60T Datasheet PDF : 9 Pages
| |||
Silan
Microelectronics
SVF12N60T/F/FG/S/K_Datasheet
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Characteristics
Symbol
Test conditions
Continuous Source Current
Pulsed Source Current
IS
Integral Reverse p-n
Junction Diode in the
ISM
MOSFET
Diode Forward Voltage
VSD
IS=12A,VGS=0V
Reverse Recovery Time
Reverse Recovery Charge
Trr
IS=12A,VGS=0V,
Qrr
dIF/dt=100A/µS (Note 2)
Notes:
1. L=30mH, IAS=6.66A, VDD=140V, RG=25Ω, starting TJ=25°C;
2. Pulse Test: Pulse width ≤300μs,Duty cycle≤2%;
3. Essentially independent of operating temperature.
Min.
--
--
--
--
--
Typ.
--
--
--
574.44
5.42
Max.
12
48
1.3
--
--
Unit
A
V
ns
µC
TYPICAL CHARACTERISTICS
Figure 1. On-Region Characteristics
100
10
Variable
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=8V
VGS=10V
VGS=15V
1
0.1
0.1
Notes:
1.250µS pulse test
2.TC=25°C
1
10
100
Drain-Source Voltage – VDS(V)
Figure 3. On-Resitance Variation vs.
Drain Current and Gate Voltage
0.66
0.65
0.64
VGS=10V
VGS=20V
0.63
0.62
0.61
0.60
0.59
0.58
0
Note: TJ=25°C
2
4
6
8 10 12
Drain Current – ID(A)
Figure 2. Transfer Characteristics
100
-55°C
25°C
150°C
10
1
Notes:
1.250µS pulse test
2.VDS=50V
0.1
0 1 2 3 4 5 6 7 8 9 10
Gate-Source Voltage– VGS(V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
100
-55°C
25°C
150°C
10
Notes:
1.250µS pulse test
2.VGS=0V
1
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Source-Drain Voltage– VSD(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.5
2012.08.23
Page 3 of 9
Share Link: 