SVD4N65T データシートの表示（PDF） - Silan Microelectronics

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SVD4N65T

4A, 650V N-CHANNEL MOSFET

Silan Microelectronics 

SVD4N65T/SVD4N65F

4A, 650V N-CHANNEL MOSFET

GENERAL DESCRIPTION

SVD4N65T/F is an N-channel enhancement mode power MOS

field effect transistor which is produced using Silan proprietary

S-RinTM structure DMOS technology. The improved planar stripe

cell and the improved guarding ring terminal have been especially

tailored to minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the avalanche

and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC

converters and H-bridge PWM motor drivers.

FEATURES

∗ 4A,650V,RDS(on)˄typ˅=2.3Ω@VGS=10V

∗ Low gate charge

∗ Low Crss

∗ Fast switching

∗ Improved dv/dt capability

ORDERING SPECIFICATIONS

Part No.

SVD4N65T

SVD4N65F

Package

TO-220-3L

TO-220F-3L

Marking

SVD4N65T

SVD4N65F

Shipping

50Unit/Tube

50Unit/Tube

ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)

Parameter

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Drain Current Pulsed

Power Dissipation(TC=25°C)

-Derate above 25°C

Single Pulsed Avalanche Energy (Note 1)

Repetitive Avalanche Energy

Operation Junction Temperature

Storage Temperature

Symbol

VDS

VGS

ID

IDM

PD

EAS

EAR

TJ

Tstg

SVD4N65T

SVD4N65F

650

±30

4.0

16

100

33

0.8

0.26

240

10.6

-55̚+150

-55̚+150

Unit

V

V

A

A

W

W/°C

mJ

mJ

°C

°C

HANGZHOU SILAN MICROELECTRONICS CO.,LTD

Http://www.silan.com.cn

REV:1.3

2009.07.09

Page 1 of 7

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