WFF2N60 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF2N60 Datasheet PDF : 7 Pages
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Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
-
Gate−source breakdown voltage
V(BR)GSS IG = ±10 μA, VDS = 0 V
±30
Drain cut−off current
VDS = 600 V, VGS = 0 V
-
IDSS
VDS = 480 V, Tc = 125°C
-
Drain−source breakdown voltage
V(BR)DSS ID = 250 μA, VGS = 0 V
600
Gate threshold voltage
VGS(th)
VDS = 10 V, ID =250 μA
2
Drain−source ON resistance
RDS(ON)
VGS = 10 V, ID =0.8A
-
Forward Transconductance
gfs
VDS = 50 V, ID =0.8A
-
Input capacitance
Ciss
VDS = 25 V,
-
Reverse transfer capacitance
Crss
VGS = 0 V,
Output capacitance
Coss
f = 1 MHz
Rise time
tr
VDD =300 V,
Switching time
Turn−on time
Fall time
ton
ID = 2.0 A
tf
RG=25 Ω
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
toff
Qg
VDD = 320 V,
VGS = 10 V,
Qgs
ID = 6.5 A
Gate−drain (“miller”) Charge
Qgd
-
-
-
-
-
(Note4,5)
-
-
-
(Note4,5)
-
WFF2N60
Type Max Unit
-
±100
nA
-
-
V
-
10
μA
-
100
μA
-
-
V
-
4
V
4.3
5
Ω
2.0
-
S
270
350
6
8
pF
40
50
10
30
25
60
ns
20
50
25
60
9.0
11
1.6
-
nC
4.3
-
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
-
-
IDR = 2 A, VGS = 0 V
IDR = 2.0A, VGS = 0 V,
dIDR / dt = 100 A / μs
Min Type Max Unit
-
-
2.0
A
-
-
9.5
A
-
-
1.4
V
-
180
-
ns
-
0.72
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=18.5mH,IAS=2.0A,VDD=50V,RG=0Ω,Starting TJ=25℃
3.ISD≤2.0A,di/dt≤200A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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