SFF10N60 データシートの表示（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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SFF10N60 Datasheet PDF : 7 Pages
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Features
� 10A,600V ,RDS(on)(Max0.75Ω)@VGS=10V
� Ultra-low Gate Charge(34nC)
� Fast Switching Capability
� 100%Avalanche Tested
� Improved dv/dt capability
SFF10N60
Silicon N-Channel MOSFET
General Description
This Power MOSFET is produced using Winsemi's advanced
planar stripe,DMOS technology. This latest technology has been
especially designed to minimize on -state resistance,have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies , power
factor correction ,UPS and a electronic lamp ballast base on half
bridge.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
ID
Drain Source Voltage
Continuous Drain Current (@Tc=25℃)
Continuous Drain Current (@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation (@Tc=25℃)
PD
Derating Factor above25℃
TJ,Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RQJC
RQJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(Note1)
(Note2)
(Note1)
(Note3)
Value
600
10*
6.0*
40*
±30
713
18
4.5
50
0.4
-55~150
300
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Value
Min Typ Max
-
-
2.5
-
-
62.5
Units
℃/W
℃/W
Rev.A Aug.2010
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