C5002 データシートの表示（PDF） - Inchange Semiconductor
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C5002 Datasheet PDF : 4 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC5002
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0
800
V
VCEsat Collector-emitter saturation voltage IC=5A;IB=1.2A
5
V
VBEsat
ICBO1
Base-emitter saturation voltage
Collector cut-off current
IC=5A;IB=1.2A
VCB=1200V ;IE=0
1.5
V
100 μA
ICBO2
IEBO
Collector cut-off current
Emitter cut-off current
VCB=1500V; IE=0
VEB=6V; IC=0
1
mA
100 μA
hFE-1
DC current gain
IC=1A ; VCE=5V
8
hFE-2
DC current gain
IC=5A ; VCE=5V
4
9
fT
Transition frequency
固IN电C半H导AN体GE SEMICONDUTOR COB
Output capacitance
Switching times
tstg
Storage time
tf
Fall time
IE=-0.5A ; VCE=12V
VCB=10V;f=1MHz
IC=4A;IB1=0.8A;
IB2=-1.6A;RL=50Ω
VCC=200V
4
100
4.0
0.2
MHz
pF
μs
μs
2
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