PDTA115ES-SOT54 データシートの表示（PDF） - Philips Electronics

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PDTA115ES-SOT54

PNP resistor-equipped transistors; R1 = 100 kΩ, R2 = 100 kΩ

Philips Electronics 

Philips Semiconductors

PNP resistor-equipped transistors;

R1 = 100 kΩ, R2 = 100 kΩ

Product specification

PDTA115E series

ORDERING INFORMATION

TYPE NUMBER

PDTA115EE

PDTA115EEF

PDTA115EK

PDTA115EM

PDTA115ES

PDTA115ET

PDTA115EU

NAME

−

−

−

−

−

−

−

PACKAGE

DESCRIPTION

plastic surface mounted package; 3 leads

plastic surface mounted package; 3 leads

plastic surface mounted package; 3 leads

leadless ultra small plastic package; 3 solder lands; body

1.0 × 0.6 × 0.5 mm

plastic single-ended leaded (through hole) package; 3 leads

plastic surface mounted package; 3 leads

plastic surface mounted package; 3 leads

VERSION

SOT416

SOT490

SOT346

SOT883

SOT54

SOT23

SOT323

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VCBO

VCEO

VEBO

VI

IO

ICM

Ptot

Tstg

Tj

Tamb

PARAMETER

collector-base voltage

collector-emitter voltage

emitter-base voltage

input voltage

positive

negative

output current (DC)

peak collector current

total power dissipation

SOT23

SOT54

SOT323

SOT346

SOT416

SOT490

SOT883

storage temperature

junction temperature

operating ambient temperature

CONDITIONS

open emitter

open base

open collector

Tamb ≤ 25 °C

note 1

note 1

note 1

note 1

note 1

notes 1 and 2

notes 2 and 3

MIN.

−

−

−

−

−

−

−

−

−

−

−

−

−

−

−65

−

−65

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60 µm copper strip line.

MAX.

−50

−50

−10

UNIT

V

V

V

+10

V

−40

V

−20

mA

−100

mA

250

mW

500

mW

200

mW

250

mW

150

mW

250

mW

250

mW

+150

°C

150

°C

+150

°C

2004 Jul 30

4

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