NT1GD64S8HB0FM データシートの表示（PDF） - Nanya Technology
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NT1GD64S8HB0FM
Nanya Technology
NT1GD64S8HB0FM Datasheet PDF : 14 Pages
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NT1GD64S8HA0FM / NT1GD64S8HB0FM
1GB : 128M x 64
PC2700 / PC2100 Unbuffered DDR SO-DIMM
AC Timing Specifications for DDR SDRAM Devices Used on Module
TA = 0 °C ~ 70 °C; VDDQ = VDD = 2.5V ± 0.2V (Part 2 of 2)
Symbol
Parameter
tIS
tIPW
tRP RE
tRP ST
tRAS
tRC
tRFC
tRCD
tRAP
tRP
tRRD
tWR
Address and control input setup time
(slow slew rate)
Input pulse width
Read preamble
Read postamble
Active to Precharge command
Active to Active/Auto-refresh command period
Auto-refresh to Active/Auto-refresh command period
Active to Read or Write delay
Active to Read Command with Auto-precharge
Precharge command period
Active bank A to Active bank B command
Write recovery time
tDAL
Auto-precharge write recovery + precharge time
tWTR
tPDEX
tXSNR
tXSRD
tREFI
Internal write to read command delay
Power down exit time
Exit self-refresh to non-read command
Exit self-refresh to read command
Average Periodic Refresh Interval
6K
Min. Max.
0.8
2.2
0.9
0.40
42ns
60
72
18
18
18
12
15
(tWR/
tCK ) +
(tRP /
tCK )
1
6
75
200
1.1
0.60
120us
7.8
75B
Min. Max.
1.0
Unit Notes
2-4,
ns 10-12,
14
2.2
ns 2-4, 12
0.9
1.1
tCK
1-4
0.40
0.60
tCK
1-4
45ns 120us
1-4
65
ns
1-4
75
ns
1-4
20
ns
1-4
20
ns
1-4
20
ns
1-4
15
ns
1-4
15
(tWR/
tCK ) +
(tRP /
tCK )
1
ns
1-4
tCK 1-4, 13
tCK
1-4
7.5
ns
1-4
75
ns
1-4
200
tCK
1-4
7.8
µs 1-4, 8
REV 1.2
12/19/2003
Preliminary
11
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
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