NT1GD64S8HB0FM データシートの表示（PDF） - Nanya Technology

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NT1GD64S8HB0FM

1GB, 512MB and 256MB 200 pin Unbuffered DDR SO-DIMM Based on DDR333 512Mb bit B Die device

Nanya Technology 

NT1GD64S8HA0FM / NT1GD64S8HB0FM

1GB : 128M x 64

PC2700 / PC2100 Unbuffered DDR SO-DIMM

Serial Presence Detect (Part 2 of 2)

35 Data Input Hold Time After Clock

DDR266B

DDR333

36-40 Reserved

41 Minimum Active/Auto-refresh Time (tRC)

42 Auto-refresh to Active/Auto-refresh Command Period (tRFC)

43 Max Cycle Time (tCK max)

44 Maximum DQS-DQ Skew Time (tDQSQ)

45 Maximum Read Data Hold Skew Factor (tQHS)

46-61 Reserved

62 SPD Revision

63 Checksum Data

DDR266B

DDR333

64-71 Manufacturer’s JEDEC ID Code

72 Module Manufacturing Location

73-90 Module Part number

91-92 Module Revision Code

Module Manufacturing Data

93-94 yy= Binary coded decimal year code, 0-99(Decimal), 00-63(Hex)

ww= Binary coded decimal year code, 01-52(Decimal), 01-34(Hex)

95-98 Module Serial Number

99-255 Reserved

0.45ns

0.50ns

Reserved

60ns

72ns

12ns

0.4ns

0.55ns

Reserved

Initial

NANYA

N/A

N/A

N/A

Year/Week Code

Serial Number

Reserved

45

50

00

3C

48

30

28

55

00

00

3C

BD

7F7F7F0B00000000

00

00

00

yy/ww

00

00

REV 1.2

12/19/2003

Preliminary

6

© NANYA TECHNOLOGY CORPORATION

NANYA reserves the right to change products and specifications without notice.

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