9972GS データシートの表示（PDF） - Advanced Power Electronics Corp
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9972GS Datasheet PDF : 6 Pages
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Advanced Power
Electronics Corp.
AP9972GS/P
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Single Drive Requirement
▼ Surface Mount Package
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP9972GP)
are available for low-profile applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TC=25℃
ID@TC=100℃
IDM
PD@TC=25℃
EAS
IAR
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy3
Avalanche Current3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
BVDSS
RDS(ON)
ID
60V
18mΩ
60A
G D S TO-263(S)
G
D
S
Rating
60
±25
60
38
230
89
0.7
450
30
-55 to 150
-55 to 150
TO-220(P)
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Value
1.4
62
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200803183
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