2SD1651 データシートの表示（PDF） - SavantIC Semiconductor

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2SD1651

Silicon NPN Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon NPN Power Transistors

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0

VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A

VBEsat

Base-emitter saturation voltage

IC=4A ;IB=0.8A

ICBO

Collector cut-off current

ICES

Collector cut-off current

IEBO

Emitter cut-off current

hFE

DC current gain

VCB=800V; IE=0

VCES=1500V; RBE=>

VEB=4V; IC=0

IC=1A ; VCE=5V

fT

Transition frequency

IC=1A ; VCE=10V

VF

Diode forward voltage

IF=5A

Product Specification

2SD1651

MIN TYP. MAX UNIT

800

V

3.0

5.0

V

1.5

V

10

µA

1.0

mA

40

130

mA

8

3

MHz

2.0

V

2

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