MJD2955 データシートの表示（PDF） - ON Semiconductor

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MJD2955

Complementary Power Transistors

ON Semiconductor 

MJD2955 (PNP) MJD3055 (NPN)

TA TC

2.5 25

TYPICAL CHARACTERISTICS

2 20

1.5 15

1 10

0.5 5

TC

TA

SURFACE

MOUNT

00

25

50

75

100

125

150

T, TEMPERATURE (°C)

Figure 1. Power Derating

500

300

200 TJ = 150°C

100

25°C

50

−55 °C

30

20

VCE = 2 V

10

5

0.01 0.02

0.05 0.1 0.2 0.5 1 2

IC, COLLECTOR CURRENT (AMP)

Figure 2. DC Current Gain

5 10

2

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.06 0.1

TJ = 25°C

VCC = 30 V

IC/IB = 10

tr

td @ VBE(off) ≈ 5 V

0.2

0.4 0.6 1

2

IC, COLLECTOR CURRENT (AMP)

Figure 3. Turn−On Time

46

1.4

1.2

TJ = 25°C

1

0.8 VBE(sat) @ IC/IB = 10

0.6

VBE @ VCE = 2 V

0.4

5

3

2

ts

1

0.7

0.5

0.3

0.2

tf

TJ = 25°C

VCC = 30 V

IC/IB = 10

IB1 = IB2

0.2

0

0.1

VCE(sat) @ IC/IB = 10

0.2 0.3 0.5

1

23

5

IC, COLLECTOR CURRENT (AMP)

Figure 4. “On” Voltages, MJD3055

0.1

0.07

0.05

10

0.06 0.1

0.2

0.4 0.6 1

2

IC, COLLECTOR CURRENT (AMP)

Figure 5. Turn−Off Time

46

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