13003ADAL-T92-F-K データシートの表示（PDF） - Unisonic Technologies
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13003ADAL-T92-F-K Datasheet PDF : 4 Pages
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13003ADA
Preliminary
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
VCBO
700
V
VCEO
450
V
Emitter-Base Voltage
Continuous Collector Current
VEBO
9
V
IC
1.5
A
TO-251
10
W
Power Dissipation (TC=25°C)
TO-126
PD
20
W
TO-92
1
W
Junction Temperature
TJ
150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-251
TO-126
TO-92
TO-251
TO-126
TO-92
SYMBOL
θJA
θJC
RATING
95
107
150
13
7.5
100
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise noted)
UNIT
°C/W
°C/W
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector-Emitter Cut-Off Current
Emitter-Base Cut-Off Current
DC Current Gain (Note)
SYMBOL
BVCBO
BVCEO
BVEBO
ICBO
ICEO
IEBO
hFE
Low current and high current hFE2 hFE1 ratio hFE1/ hFE2
Collector-Emitter Saturation Voltage (Note)
VCE(SAT)
Base-Emitter Saturation Voltage (Note)
VBE(SAT)
Storage Time
tS
Rise Time
tR
Fall Time
tF
Transition Frequency
fT
Note: Pulse test, pulse width tp≤300µs, Duty cycle≤2%.
TEST CONDITIONS
IC=0.1mA, IE=0
IC=1mA, IB=0
IE=0.1mA, IC=0
VCB=700V, IE=0
VCE=450V, IB=0
VEB=7V, IC=0
VCE=5V, IC=5mA
VCE=10V, IC=200mA
VCE=5V, IC=1.5mA
hFE1: VCE=5V, IC=5mA
hFE2: VCE=5V, IC=0.2A
IC=0.5A, IB=0.1A
IC=1.5A, IB=0.5A
VCC=24V, IC=0.5A, IB1=-IB2=0.1A
VCE=10V, IC=0.2A
MIN
700
450
9
6
8
4
0.75
4
TYP
0.8
0.18
0.9
MAX UNIT
V
V
V
100 μA
50 μA
10 μA
40
40
0.8 V
2.0 V
4 μs
μs
0.7 μs
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R223-016.d
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